Ti:Sapphire
Ti:Sapphire laser gain material for red and near-infrared emission ranging from 650 to 1100 nm
Technical parameters
| Material properties | |||
|---|---|---|---|
| Host | Sapphire (Al2O3) | ||
| Dopant | Ti3+ | ||
| Crystal structure | hexagonal | ||
| Absorption range | 1 to7 cm-1 @532 nm | ||
| Concentration range | 0,05-0,3 wt.% Ti2O3 | ||
| Unit cell dimensions | a=4,748 Å; c=12,957 Å | ||
| Refractive index at 800 nm | 1.76 | ||
| Thermal expansion coefficient | 4.78 x 10-6 °K-1 perpendicular to c-axis | ||
| 5.31 x 10-6 °K-1 parallel to c-axis | |||
| Thermal conductivity | 33 W/mK | ||
| Density | 3.98 g/cm3 | ||
| Hardness by Mohs | 9 | ||
| Fluorescent lifetime at room temp. | 3.2 µs | ||
| Pump wavelength | 400-600 nm (peak at 488 nm) | ||
| Laser wavelength | 650-1100 nm (peak at 795 nm) | ||
| Emission cross section at 790 nm | 41 x 10-20 cm2 | ||
| FOM | Over 100 or 200 dependent on the dopation of the Ti2O3 | ||
Detailed information available on Characterization of Absorption Bands in Ti:sapphire Crystals and on Optimized InGaN-diode pumping of Ti:sapphire crystals (paid access through OSA Publishing)
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